Display apparatus

ABSTRACT

Provided is a display apparatus. The display apparatus may include a monolithic device in which a light emitting element array, a transistor array, and a color control member are monolithically provided on one substrate. The display apparatus may include a first layered structure including the light emitting element array, a second layered structure including the transistor array, and a third layered structure including the color control member, wherein the second layered structure may be between the first layered structure and the third layered structure. The light emitting element array may include a plurality of light emitting elements comprising an inorganic material. The plurality of light emitting elements may have a vertical nanostructure.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/000,336 filed Jun. 5, 2018, which claims the benefit of U.S.Provisional Application No. 62/515,161, filed on Jun. 5, 2017, in theU.S. Patent and Trademark Office and claims priority from Korean PatentApplication Nos. 10-2017-0069526, filed on Jun. 5, 2017 and10-2017-0091719, filed on Jul. 19, 2017, in the Korean IntellectualProperty Office, the disclosures of which are incorporated herein intheir entireties by reference.

BACKGROUND 1. Field

Apparatuses consistent with exemplary embodiments relate to displayapparatuses.

2. Description of the Related Art

Liquid crystal displays (LCDs) and organic light emitting diode (OLED)displays are widely used as display apparatuses. However, an LCD such asa liquid crystal on silicon (LCOS) may be undesirably large, and an OLEDhas a short lifetime. In comparison with a LCOS display or an OLEDdisplay, an inorganic-based LED (iLED) display may have comparativeadvantages in various aspects such as brightness, resolution, contrastratio, lifetime, multi-depth, form factor, and color purity.

SUMMARY

One or more exemplary embodiments pay provide display apparatusessuitable for high resolution implementation.

One or more exemplary embodiments pay provide a display apparatus thatmay be manufactured to have a small size and may have excellentcharacteristics in various aspects such as brightness, resolution,contrast ratio, lifetime, multi-depth, form factor, color purity, andpower efficiency.

One or more exemplary embodiments pay provide light emitting elements(light emitting devices) that may be applied to the above displayapparatuses.

Additional exemplary aspects and advantages will be set forth in part inthe description which follows and, in part, will be apparent from thedescription, or may be learned by practice of the presented exemplaryembodiments.

According to an aspect of an exemplary embodiment, a display apparatusincludes: a substrate; a first layered structure provided on thesubstrate and including an array of a plurality of light emittingelements comprising an inorganic material; a second layered structureincluding an array of a plurality of transistors electrically connectedto the plurality of light emitting elements; and a third layeredstructure including a color control member configured to adjust a colorof light generated by the plurality of light emitting elements, whereinthe second layered structure is disposed between the first layeredstructure and the third layered structure.

The plurality of light emitting elements may each include a verticalnanostructure perpendicular to the substrate, and the verticalnanostructure may have a core-shell structure including a firstconductivity type semiconductor, an active layer, and a secondconductivity type semiconductor.

A first electrode electrically contacting a first group of lightemitting elements from among the plurality of light emitting elementsmay be provided on the substrate, a first insulating layer covering thefirst electrode and the first group of light emitting elements may beprovided on the substrate, the plurality of transistors may be providedon the first insulating layer, a second insulating layer covering theplurality of transistors and the plurality of light emitting elementsmay be provided on the first insulating layer, a second electrodeelectrically connected to the plurality of light emitting elements maybe provided on the second insulating layer, the first electrode may beconnected to one of the plurality of transistors through a firstconductive plug formed to penetrate the first insulating layer, and thesecond electrode may be connected to the plurality of light emittingelements through a second conductive plug formed to penetrate the firstand second insulating layers.

A first electrode electrically contacting a first group of lightemitting elements among the plurality of light emitting elements may beprovided at a top surface of the substrate, a first insulating layercovering the first electrode and the first group of light emittingelements may be provided at a top surface of the substrate, theplurality of transistors may be provided on the first insulating layer,the first electrode may be connected to one of the plurality oftransistors through a first conductive plug formed to penetrate thefirst insulating layer, and a second electrode electrically connected tothe plurality of light emitting elements may be provided at a bottomsurface of the substrate.

The second layered structure may include an insulating layer coveringthe plurality of light emitting elements and the plurality oftransistors, the insulating layer may have a substantially flat surface,the third layered structure may be provided on a flat surface of theinsulating layer, and the third layered structure may have asubstantially flat layer structure.

The plurality of light emitting elements may be blue light emittingelements, the plurality of light emitting elements may include a firstgroup of light emitting elements corresponding to a first subpixel, asecond group of light emitting elements corresponding to a secondsubpixel, and a third group of light emitting elements corresponding toa third subpixel, and the color control member may include ablue-to-green color converting element corresponding to the secondsubpixel and a blue-to-red color converting element corresponding to thethird subpixel. The color control member may further include a lightscattering element corresponding to the first subpixel.

The display apparatus may further include: a yellow recycling film (YRF)provided between the second layered structure and the third layeredstructure; and a blue cut filter (BCF) provided on the third layeredstructure to cover the blue-to-green color converting element and theblue-to-red color converting element.

According to an aspect of another exemplary embodiment, a displayapparatus includes: a light emitting element array provided on asubstrate and including a plurality of light emitting elements based onan inorganic material; a transistor array including a plurality oftransistors electrically connected to the plurality of light emittingelements; a color control member configured to adjust a color of lightgenerated by the plurality of light emitting elements; a first opticalfilm provided between the color control member and the light emittingelement array to transmit a light of a first wavelength band and reflecta light of a second wavelength band; and a second optical film providedto face the first optical film with the color control membertherebetween, to block a light of the first wavelength band and transmita light of the second wavelength band, wherein the light emittingelement array, the transistor array, the first optical film, the colorcontrol member, and the second optical film are monolithically providedon the substrate to construct a monolithic device.

The first optical film may include a yellow recycling film (YRF), andthe second optical film may include a blue cut filter (BCF).

According to an aspect of another exemplary embodiment, an apparatus (anelectronic apparatus) includes the above display apparatus. Theapparatus may include a wearable apparatus or a portable apparatus. Forexample, the apparatus may include an augmented reality (AR) display, avirtual reality (VR) display, or a projection display.

According to an aspect of another exemplary embodiment, a light emittingdevice includes at least one vertical light emitting structure, the atleast one vertical light emitting structure including: a firstconductivity type semiconductor including a first portion perpendicularto a substrate and a second portion on the first portion, wherein thefirst portion has a first width and the second portion has a secondwidth larger than the first width; an active layer covering the secondportion of the first conductivity type semiconductor; and a secondconductivity type semiconductor covering the active layer. The firstportion may have a nanowire shape, and the second portion may have ananopyramid shape. The first portion may have a width of about 600 nm orless and a height of about 1 μm or more. A surface of the second portionmay include a (10-11) s-plane.

According to an aspect of another exemplary embodiment, a method ofmanufacturing a display apparatus includes: forming a first layeredstructure including an array of a plurality of light emitting elementson a substrate; forming a second layered structure including an array ofa plurality of transistors electrically connected to the plurality oflight emitting elements on the first layered structure; and forming athird layered structure including a color control member configured toadjust a color of light generated by the plurality of light emittingelements on the second layered structure, wherein the second layeredstructure is disposed between the first layered structure and the thirdlayered structure.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other exemplary aspects and advantages will become apparentand more readily appreciated from the following description of exemplaryembodiments, taken in conjunction with the accompanying drawings inwhich:

FIG. 1 is a cross-sectional view illustrating a display apparatusaccording to an exemplary embodiment;

FIG. 2 is a plan view illustrating a display apparatus according to anexemplary embodiment;

FIG. 3A is a cross-sectional view illustrating a unit region of adisplay apparatus, according to an exemplary embodiment;

FIG. 3B is a plan view illustrating an example of a planar structure ofa unit region of a display apparatus, according to the exemplaryembodiment of FIG. 3A;

FIG. 4A is a cross-sectional view illustrating a unit region of adisplay apparatus, according to another exemplary embodiment;

FIG. 4B is a plan view illustrating an example of a planar structure ofa unit region of a display apparatus, according to the exemplaryembodiment of FIG. 4A;

FIG. 5 is a cross-sectional view illustrating a light emitting elementand an electrode structure that may be applied to a display apparatus,according to an exemplary embodiment;

FIG. 6 is a circuit diagram illustrating a circuit configuration of aunit region of a display apparatus, according to an exemplaryembodiment;

FIG. 7 is a circuit diagram illustrating a circuit configuration of aunit region of a display apparatus, according to another exemplaryembodiment;

FIG. 8 is a cross-sectional view illustrating a light emitting elementthat may be applied to a display apparatus, according to an exemplaryembodiment;

FIG. 9 is a cross-sectional view illustrating a light emitting elementthat may be applied to a display apparatus, according to anotherexemplary embodiment;

FIG. 10 is a cross-sectional view illustrating a light emitting elementthat may be applied to a display apparatus, according to anotherexemplary embodiment;

FIG. 11 is a cross-sectional view illustrating a display apparatusaccording to another exemplary embodiment;

FIG. 12 is a cross-sectional view illustrating a display apparatusaccording to another exemplary embodiment;

FIG. 13 is a diagram illustrating a display apparatus according to acomparative example;

FIG. 14 is a diagram illustrating a display apparatus according toanother comparative example;

FIG. 15 is a plan view illustrating a display apparatus according toanother exemplary embodiment;

FIG. 16 is a plan view illustrating a display apparatus according toanother exemplary embodiment;

FIG. 17 is a flowchart illustrating a method of manufacturing a displayapparatus, according to an exemplary embodiment;

FIGS. 18(A) and 18(B) through 22(A) and 22(B) are diagrams illustratinga method of forming a plurality of light emitting elements in a methodof manufacturing a display apparatus, according to an exemplaryembodiment;

FIGS. 23(A) and 23(B) through to 26(A) and 26(B) are diagramsillustrating a method of forming a plurality of light emitting elementsin a method of manufacturing a display apparatus, according to anotherexemplary embodiment;

FIGS. 27 to 30 are cross-sectional views illustrating a method offorming a plurality of light emitting elements in a method ofmanufacturing a display apparatus, according to another exemplaryembodiment;

FIGS. 31 to 35 are plan views illustrating a method of forming atransistor array in a method of manufacturing a display apparatus,according to an exemplary embodiment;

FIGS. 36 and 37 are plan views illustrating a method of forming atransistor array in a method of manufacturing a display apparatus,according to another exemplary embodiment; and

FIGS. 38 to 41 are cross-sectional views illustrating a method offorming a color control member in a method of manufacturing a displayapparatus, according to an exemplary embodiment.

DETAILED DESCRIPTION

Various exemplary embodiments will now be described more fully withreference to the accompanying drawings in which exemplary embodimentsare shown.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it may be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. As used herein the term “and/or” includesany and all combinations of one or more of the associated listed items.

It will be understood that, although the terms “first”, “second”, etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of exemplary embodiments.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” may encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exemplaryembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof.

Exemplary embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofidealized versions (and intermediate structures) of exemplaryembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, exemplary embodiments should not be construedas limited to the particular shapes of regions illustrated herein butare to include deviations in shapes that result, for example, frommanufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. Thus, the regions illustrated in the figures are schematicin nature and their shapes are not intended to illustrate the actualshape of a region of a device and are not intended to limit the scope ofexemplary embodiments.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which exemplary embodiments belong. Itwill be further understood that terms, such as those defined incommonly-used dictionaries, should be interpreted as having a meaningthat is consistent with their meaning in the context of the relevant artand will not be interpreted in an idealized or overly formal senseunless expressly so defined herein.

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings, wherein like referencenumerals refer to like elements throughout. In this regard, the presentexemplary embodiments may have different forms and should not beconstrued as being limited to the descriptions set forth herein.Accordingly, the embodiments are merely described below, by referring tothe figures, to explain aspects. As used herein, the term “and/or”includes any and all combinations of one or more of the associatedlisted items. Expressions such as “at least one of,” when preceding alist of elements, modify the entire list of elements and do not modifythe individual elements of the list.

Hereinafter, display apparatuses according to exemplary embodiments willbe described in detail with reference to the accompanying drawings. Thewidths and thicknesses of layers or regions illustrated in theaccompanying drawings may be exaggerated for clarity and convenience ofdescription. Like reference numerals may denote like elements throughoutthe specification.

FIGS. 1 and 2 are a cross-sectional view and a plan view illustrating adisplay apparatus according to an exemplary embodiment.

Referring to FIGS. 1 and 2, a light emitting element array LA10,including a plurality of light emitting elements LE10 and a transistorarray TA10, including a plurality of transistors TR10 electricallyconnected to the plurality of light emitting elements LE10, may beprovided on a substrate SUB10. Also, a color control member CL10configured to adjust a color of light generated by the plurality oflight emitting elements LE10 may be further provided. The color controlmember CL10 may have a generally flat layer structure (a substantiallyflat layer structure). The light emitting element array LA10, thetransistor array TA10, and the color control member CL10 may bemonolithically provided on one substrate SUB10. In other words, thelight emitting element array LA10, the transistor array TA10, and thecolor control member CL10 may be monolithically formed on one substrateSUB10 without having been transferred from another substrate to thesubstrate SUB10.

With respect to the substrate SUB10, the transistor array TA10 may bedisposed at a higher position than the light emitting element arrayLA10. In other words, the light emitting element array LA10 may bedisposed closer to the substrate SUB10 than the transistor array TA10,and the transistor array TA10 may be disposed closer to the colorcontrol member CL10 than the light emitting element array LA10. Thedisplay apparatus may include a first layered structure including thelight emitting element array LA10 and a second layered structureincluding the transistor array TA10, and the second layered structuremay be disposed at a distance from the substrate SUB10 between that ofthe first layered structure and that of the color control member CL10.

As shown in FIGS. 1 and 2, each of the plurality of transistors TR10 maybe disposed to be spaced apart from the light emitting element LE10 in adirection parallel to the substrate SUB10 such that the transistor TR10does not overlap with the corresponding light emitting element LE10.Thus, the light generated by the light emitting element LE10 may beirradiated onto the color control member CL10 without being obstructedby, or having been incident on, the transistor TR10. However, when atleast a portion of the transistor TR10 is transparent, the lightemitting element LE10 may at least partially overlap the transistor TR10corresponding thereto.

The plurality of light emitting elements LE10 may comprise an inorganicmaterial-based light emitting device (LED). In other words, each of theplurality of light emitting elements LE10 may include an inorganicmaterial-based light emitting material (semiconductor light emittingmaterial). For example, the inorganic material-based light emittingmaterial may include a III-V group-based semiconductor. The III-Vgroup-based semiconductor may include a gallium nitride (GaN)-basedsemiconductor. However, the light emitting materials of the lightemitting element LE10 are not limited thereto and may vary according tovarious embodiments.

The plurality of transistors TR10 may be thin film transistors (TFTs).Thus, the transistor array TA10 may be referred to as a TFT-baseddriving unit. A channel layer of the plurality of transistors TR10 mayinclude polycrystalline silicon (poly-Si) or amorphous silicon (a-Si).Alternatively, the channel layer may include at least one of an oxidesemiconductor, a nitride semiconductor, and an oxynitride semiconductor.For example, the channel layer may include at least one of a ZnO-basedsemiconductor, a SnO-based semiconductor, an InO-based semiconductor,ZnON-based semiconductor, a ZnONF-based semiconductor, a ZnN-basedsemiconductor, and a ZnNF-based semiconductor. In this case, the channellayer may further include an additional element X. The additionalelement X may include at least one of a group I element, a group IIelement, a group III element, a group IV element, a group V element, atransition metal element, and a lanthanum (Ln)-based element. As aparticular example, the additional element X may include at least one ofLi, K, Mg, Ca, Sr, Ba, Ga, Al, In, B, Si, Sn, Ge, Sb, Y, Ti, Zr, V, Nb,Ta, Sc, Hf, Mo, Mn, Fe, Co, Ni, Cu, W, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd,Tb, Dy, Ho, Er, Tm, Yb, and Lu. Alternatively, the additional element Xmay include at least one of a group VI element and a group VII element.As a particular example, the additional element X may include at leastone of F, Cl, Br, I, S, and Se. The ZnO-based semiconductor may include,for example, GaInZnO and HfInZnO. However, the above channel layermaterials are merely examples and may vary according to variousembodiments. For example, a III-V group-based semiconductor (e.g., GaN)or monocrystalline silicon may be used as a channel layer material.Also, an organic semiconductor may be used as a channel layer material.

The color control member CL10 may include a quantum dot (QD)-based colorconverter or a color filter. The color converter may change a color(wavelength) of light transmitted therethrough, and the color filter mayselectively transmit light in a predetermined wavelength band. The colorconverter may include a mixture of a photoresist (PR) material,predetermined quantum dots, and a light scattering agent. The colorfilter may also include a quantum dot layer including a plurality ofquantum dots. The quantum dots included in the color converter or in thecolor filter may have a core-shell structure having a core portion and ashell portion or may have a shell-less particle structure. Thecore-shell structure may be a single-shell structure or a multi-shellstructure. The multi-shell structure may be, for example, a double-shellstructure. Each of the quantum dots may include, for example, at leastone of a II-VI group-based semiconductor, a III-V group-basedsemiconductor, a IV-VI group-based semiconductor, a IV group-basedsemiconductor, and a graphene quantum dot. Each of the quantum dots mayhave a diameter of about tens of nm or less, for example, a diameter ofabout 10 nm or less. An organic ligand or an inorganic ligand may existat a surface of the quantum dot. The characteristics of the colorconverter or the color filter may vary according to the materials,configurations, and/or sizes of the quantum dots included in the colorconverter or the color filter. Herein, a description has been given of acase in which the color control member CL10 includes quantum dots;however, in some cases, the color control member CL10 may have anotherconfiguration that does not include quantum dots. Also, although notillustrated, an optical film or an optical filter may be provided on atleast one of a top surface and a bottom surface of the color controlmember CL10.

The display apparatus of the present exemplary embodiment may include aplurality of unit regions SP1, SP2, and SP3. Three unit regions SP1,SP2, and SP3 are illustrated in FIG. 1. Each of the plurality of unitregions SP1, SP2, and SP3 may correspond to a subpixel region. Each ofthe plurality of unit regions SP1, SP2, and SP3 may include a group oflight emitting elements LE10 and may include at least one transistorTR10 electrically connected to the group of light emitting elementsLE10. The group of light emitting elements LE10 and the transistor TR10connected thereto may be disposed to be spaced apart from each other inthe direction parallel to the substrate SUB10 such that they do notoverlap each other. The color control member CL10 may have differentconfigurations in at least two of the plurality of unit regions SP1,SP2, and SP3. For this purpose, the color control member CL10 mayinclude a plurality of different color control regions that aredifferent from each other. The color control member CL10 may have apatterned layer structure.

In FIGS. 1 and 2, a combination of the light emitting array LA10 and thecolor control member CL10 may be referred to as an RGB light emittingunit. Also, the plurality of transistors TR10 may be referred to asconstituting a transistor-based driving unit. The configurations of theplurality of light emitting elements LE10, the plurality of transistorsTR10, and the color control member CL10, and the connectionrelationships therebetween will be described in more detail withreference to FIGS. 3A to 12.

FIG. 3A is a cross-sectional view illustrating a unit region of adisplay apparatus according to an exemplary embodiment. FIG. 3B is anexample of a plan view corresponding to FIG. 3A.

Referring to FIG. 3A, a semiconductor layer SL10 may be provided on asubstrate SUB10-1. The substrate SUB10-1 may be any one of varioussubstrates used in a general semiconductor device process. For example,the substrate SUB10-1 may include an insulator such as sapphire (Al2O3).However, the substrate SUB10-1 may include materials other than sapphire(Al2O3). The semiconductor layer SL10 may be, for example, an n-typesemiconductor layer or may be a p-type semiconductor layer in somecases. The semiconductor layer SL10 may have a single-layer structure ora multi-layer structure. The semiconductor layer SL10 may include aIII-V group-based n-type semiconductor, for example, n-GaN.

A mask layer ML10 having at least one opening may be provided on thesemiconductor layer SL10. At least one light emitting element LE10 a maybe formed from a region of the semiconductor layer SL10 exposed by theopening of the mask layer ML10. A plurality of light emitting elementsLE10 a may be provided in one unit region, which may be referred to as afirst light emitting element group. As illustrated in an enlarged viewabove, each of the light emitting elements LE10 a may include a firstconductivity type semiconductor SC1, a second conductivity typesemiconductor SC2, and an active layer AL1 therebetween.

The plurality of light emitting elements LE10 a may be a vertical lightemitting structure perpendicular to the substrate SUB10-1. The verticallight emitting structure may have, for example, a nanowire shape. Thevertical light emitting structure LE10 a may include a firstconductivity type semiconductor SC1 having a nanopillar shape, and anactive layer AL1 and a second conductivity type semiconductor SC2surrounding the first conductivity type semiconductor SC1. The firstconductivity type semiconductor SC1 may be referred to as a core portionconnected to the semiconductor layer SL10, and the active layer AL1 andthe second conductivity type semiconductor SC2 may be referred to as ashell portion. Therefore, the vertical light emitting structure may bereferred to as having a core-shell structure.

The first conductivity type semiconductor SC1 may be an n type and thesecond conductivity type semiconductor SC2 may be a p type, or viceversa. The active layer AL1 may include a light emitting layer thatemits light when electrons and holes combine together. The firstconductivity type semiconductor SC1, the active layer AL1, and thesecond conductivity type semiconductor SC2 may have various modifiedstructures. For example, the first conductivity type semiconductor SC1and the second conductivity type semiconductor SC2 may have amulti-layer structure. The active layer AL1 may have a structure inwhich a quantum well layer and a barrier layer are alternately stackedone or more times. In this case, the quantum well layer may have asingle-quantum well (SQW) structure or a multi-quantum well (MQW)structure. At least one of the first conductivity type semiconductorSC1, the active layer AL1, and the second conductivity typesemiconductor SC2 may have a III-V group-based semiconductor. As anexample, the first conductivity type semiconductor SC1 may include ann-GaN-based material, the second conductivity type semiconductor SC2 mayinclude a p-GaN-based material, and the active layer AL1 may have aGaN-based MQW structure. Also, although not illustrated, the lightemitting element LE10 a may further include a superlattice structurelayer. Also, at least one of the active layer AL1 and the secondconductivity type semiconductor SC2 may have a continuous layerstructure to cover a region of the plurality of light emitting elementsLE10 a, instead of being patterned in units of each light emittingelement LE10 a. In this case, the plurality of light emitting elementsLE10 a may have a connected structure without being electricallyisolated from each other.

A first electrode E10 contacting a first region of the plurality oflight emitting elements LE10 a may be provided on the mask layer ML10.The first electrode E10 may contact the second conductivity typesemiconductor SC2 of the light emitting element LE10 a. For example, thefirst electrode E10 may be a p-type electrode. Also, the first electrodeE10 may be a kind of anode and may be formed of a transparent conductivematerial.

A first insulating layer NL10 covering the plurality of light emittingelements LE10 a or filling a surrounding region thereof may be providedon the mask layer ML10. The first insulating layer NL10 may be formed ofa transparent material and may mostly or at least partially cover theplurality of light emitting elements LE10 a and the first electrode E10.The first insulating layer NL10 may have a height equal or similar tothat of the light emitting element LE10 a. A portion of the top of thelight emitting element LE10 a may somewhat protrude above the firstinsulating layer NL10. However, this is merely an example, and it maynot protrude in some cases.

A first transistor TR10 a may be provided on the first insulating layerNL10. The first transistor TR10 a may include a first channel layer C1,a first source electrode S1, a first drain electrode D1, a first gateelectrode GI, and a gate insulating layer GI1. The first channel layerC1 may be provided on the first insulating layer NL10, and the gateinsulating layer GI1 may be provided to cover the first channel layerC1. The first gate electrode G1 corresponding to the first channel layerC1 may be provided on the gate insulating layer GI1. The first sourceelectrode S1 and the first drain electrode D, electrically connected tothe first channel layer C1, may be provided on both sides of the gateelectrode G1. An intermediate insulating layer (interlayer insulatinglayer) NL15, covering the first gate electrode GI, may be provided onthe gate insulating layer GI1, and the first source electrode S1 and thefirst drain electrode D, electrically connected to the first channellayer C, may be provided on the intermediate insulating layer NL15.

The first transistor TR10 a may be electrically connected to theplurality of light emitting elements LE10 a. The first transistor RR10 amay be connected to the first electrode E10 through a first conductiveplug CP10 provided in the first insulating layer NL10. The firstconductive plug CP10 may penetrate the intermediate insulating layerNL15, the gate insulating layer GI1, and the first insulating layerNL10. In other words, a first hole H1 may penetrate the intermediateinsulating layer NL15, the gate insulating layer GI1, and the firstinsulating layer NL10, thereby exposing the first electrode E10, and thefirst conductive plug CP10 may be provided in the first hole H1. Thefirst conductive plug CP10 may at least partially fill the first holeH1. The first conductive plug CP10 may mostly or completely fill thefirst hole H1.

A transparent second insulating layer NL20, covering the firsttransistor TR10 a and the plurality of light emitting elements LE10 a,may be provided on the substrate SUB10-1. A top surface of the secondinsulating layer NL20 may be flat or substantially flat. For example,the top surface of the second insulating layer NL20 may be planarized bya chemical mechanical polishing (CMP) process. A second electrode E20,electrically connected to a second region of the plurality of lightemitting elements LE10 a, may be provided on the second insulating layerNL20. The second electrode E20 may be electrically connected to thefirst conductivity type semiconductor SC1 of the plurality of lightemitting elements LE10 a. For example, the second electrode E20 may bean n-type electrode. Also, the second electrode E20 may be referred toas a common cathode. The second electrode E20 may be formed of atransparent conductive material and may be grounded or connected to aground electrode.

The second electrode E20 may be connected to the plurality of lightemitting elements LE10 a through a second conductive plug CP20, whichpenetrates the first and second insulating layers NL10 and NL20. Asecond hole H2 may penetrate the second insulating layer NL20, theintermediate insulating layer NL15, the gate insulating layer GI1, thefirst insulating layer NL10, and the mask layer ML10, thereby exposingthe semiconductor layer SL10, and the second conductive plug CP20 may beprovided in the second hole H2. The second conductive plug CP20 maypartially or completely fill the second hole H2. The second conductiveplug CP20 may be electrically connected to the first conductivity typesemiconductor SC1 of the plurality of light emitting elements LE10 athrough the semiconductor layer SL10.

FIG. 3B is a plan view illustrating an example of a planar structure ofa unit region of a display apparatus according to the exemplaryembodiment of FIG. 3A.

Referring to FIG. 3B, a scan line SL1 extending in a predetermineddirection, for example, an X-axis direction may be provided on thesubstrate SUB10-1. A data line DL1 and a voltage source line VL1 may beprovided to extend in a direction intersecting the scan line SL1, forexample, a Y-axis direction. The data line DL1 and the voltage sourceline VL1 may be spaced apart from each other in the X-axis direction. Afirst group of light emitting elements LE10 a may be provided betweenthe data line DL1 and the voltage source line VL1.

A first transistor TR10 a, connected between the voltage source line VL1and the plurality of light emitting elements LE10 a, may be provided. Asecond transistor TR10 b may be provided near or at an intersectionbetween the scan line SL1 and the data line DL1. Also, a capacitor CT10connected between the voltage source line VL1 and the first and secondtransistors TR10 a and TR10 b may be further provided.

The first transistor TR10 a may include a first channel layer C1, afirst gate electrode G1, a first source electrode S1, and a first drainelectrode D1. Herein, the first source electrode S1 may be a portionprotruding from the voltage source line VL1 in a direction perpendicularthereto. The first drain electrode D1 may be spaced apart from the firstsource electrode Si, and the first gate electrode G1 may be disposedtherebetween. The first transistor TR10 a may be a driving transistor.

The second transistor TR10 b may include a second channel layer C2, asecond gate electrode G2, a second source electrode S2, and a seconddrain electrode D2. The second gate electrode G2 may be a portionprotruding from the scan line SL1 in a direction perpendicular thereto.The second source electrode S2 may be a portion protruding from the dataline DL1 in a direction perpendicular thereto. The second drainelectrode D2 may be spaced apart from the second source electrode S2,and the second gate electrode G2 may be disposed therebetween. Thesecond transistor TR10 b may be a switching transistor.

The capacitor CT10 may include a first conductor CD1 and a secondconductor CD2, and an insulating layer (a dielectric layer) may beprovided therebetween. The first conductor CD1 may be a layer providedon the same level as that of the first and second gate electrodes G1 andG2, and may be electrically connected to the second drain electrode D2.Also, the first conductor CD1 may be connected to the first gateelectrode G1. The first conductor CD1 and the first gate electrode G1may form a bent structure (e.g., an L-shaped structure). The secondconductor CD2 may be a portion protruding from the voltage source lineVL1 in a direction perpendicular thereto, and may extend above the firstconductor CD1.

The first and second channel layers C1 and C2 may includepolycrystalline silicon (poly-Si) or amorphous silicon (a-Si), or mayinclude at least one of an oxide semiconductor, a nitride semiconductor,and an oxynitride semiconductor. However, the above-described channellayer materials are merely examples and other channel layer materialsmay be used. For example, the first and second channel layers C1 and C2may include a III-V group-based semiconductor (e.g., GaN),monocrystalline silicon, or an organic semiconductor.

The first electrode E10 may be connected to the first drain electrode D1through the first conductive plug CP10. The second electrode E20 may beconnected to the semiconductor layer SL10 (see FIG. 3A) through thesecond conductive plug CP20. The first electrode E10 may be referred toas being electrically connected to a first region of the plurality oflight emitting elements LE10 a, and the second electrode E20 may bereferred to as being electrically connected to a second region of theplurality of light emitting elements LE10 a. Meanwhile, referencenumerals c11 and c12 denote contact portions connecting the firstchannel layer C1 to the first source electrode S1 and the first drainelectrode D1, reference numerals c13 and c14 denote contact portionsconnecting the second channel layer C2 to the second source electrode S2and the second drain electrode D2, and a reference numeral c15 denotes acontact portion connecting the first conductor CD1 to the second drainelectrode D2.

The first transistor TR10 a may be an n-type transistor (e.g., an NMOStransistor) or a p-type transistor (e.g., a PMOS transistor), and thefunctions of the first source electrode S1 and the first drain electrodeD1 may be reversed according to the types thereof. Likewise, the secondtransistor TR10 b may be an n-type transistor or a p-type transistor,and the functions of the second source electrode S2 and the second drainelectrode D2 may be reversed according to the types thereof.

FIG. 4A is a cross-sectional view illustrating a unit region of adisplay apparatus according to another exemplary embodiment. FIG. 4B isan example of a plan view corresponding to FIG. 4A.

Referring to FIGS. 4A and 4B, in the present exemplary embodiment, asecond electrode E22 may be provided at a bottom surface (rear or backsurface) of a substrate SUB10-2. Herein, the substrate SUB10-2 may be asemiconductor substrate or a conductive substrate. In this case, evenwhen the second electrode E22 is provided at the bottom surface of thesubstrate SUB10-2, the second electrode E22 may be electricallyconnected to a plurality of light emitting elements LE10 a through thesubstrate SUB10-2 and a semiconductor layer SL10. The second electrodeE22 may be a transparent electrode or an opaque electrode.

The substrate SUB10-2 of the present embodiment may be, for example, aSi substrate. The Si substrate may be a Si (111) substrate, and may bedoped with predetermined conductive impurities when appropriate.However, the types/materials of the substrate SUB10-2 are not limitedthereto and may vary according to various embodiments. Varioussubstrates such as a sapphire (Al₂O₃) substrate, a Si substrate, a SiCsubstrate, an amorphous AlN substrate, and a Si—Al substrate may be usedas the substrate SUB10-1 of FIG. 3A or the substrate SUB10-2 of FIG. 4A.As illustrated in FIGS. 4A and 4B, when the second electrode E22 isprovided at the bottom surface of the substrate SUB10-2, its size may bereduced. Also, since the second conductive plug CP20 (see FIGS. 3A and3B) need not be formed, a process thereof may be simplified. In somecases, instead of separately forming the second electrode E22, thesubstrate SUB10-2 itself may be used as an electrode (second electrode).

In FIGS. 4A and 4B, other than the size and/or position of the secondelectrode E22 and the fact that the second conductive plug CP20 (seeFIGS. 3A and 3B) is not included, the other configurations may beidentical or similar to those described with reference to FIGS. 3A and3B.

In FIGS. 3B and 4B, an area of a region occupied by a group of lightemitting elements LE10 a in one unit region is illustrated as beingcomparatively smaller than an area of a region occupied by twotransistors TR10 a and TR10 b and one capacitor CT10; however, thecomparative ratio of the areas of the regions may vary in an actualdevice. In one unit region (subpixel), an area of the first electrodeE10 contacting a group of light emitting elements LE10 a may be about40% or more or about 50% or more of an area of the unit region. In anactual device, the transistors TR10 a and TR10 b and the capacitor CT10may be formed in sizes smaller than those illustrated in FIGS. 3B and4B. About four or more light emitting elements LE10 a may be included inone unit region.

Although FIGS. 3A and 4A illustrate cases in which the first electrodeE10 completely covers the plurality of light emitting elements LE10 a, aportion of the plurality of light emitting elements LE10 a, for example,an end portion of the top thereof may not be covered by the firstelectrode E10. An example thereof is illustrated in FIG. 5.

Referring to FIG. 5, an end portion of the top of a plurality of lightemitting elements LE10 a may not be covered by a first electrode E11.The first electrode E11 may be obtained by forming an electrode materiallayer completely covering the plurality of light emitting elements LE10a and then removing a portion thereof. When a top region of theplurality of light emitting elements LE10 a is not covered by the firstelectrode E11, the emission efficiency of light emitted upward from theplurality of light emitting elements LE10 a may be improved. Except forthe shape of the first electrode E11, the other configurations may bethe same as those described with reference to FIG. 3A or 4A.

FIGS. 3B and 4B illustrate an example of a case in which a unit regionof the display apparatus has a 2T (transistor)-1C (capacitor)configuration. In this case, a circuit configuration of the unit regionof the display apparatus according to an exemplary embodiment may be thesame as that illustrated in FIG. 6.

FIG. 6 is a circuit diagram illustrating a circuit configuration of aunit region of a display apparatus according to an exemplary embodiment.

Referring to FIG. 6, a scan line SL11 may be provided, and a data lineDL11 and a voltage source line VL11 intersecting the scan line SL11 maybe provided. A first transistor T11, connected between the voltagesource line VL11 and a first group of light emitting elements L11, maybe provided. A second transistor T21 may be provided at an intersectionbetween the scan line SL11 and the data line DL11. A capacitor C11connected between the voltage source line VL11 and the first and secondtransistors T11 and T21 may be provided. The scan line SL11, the dataline DL11, the voltage source line VL11, the light emitting element L11,the first transistor T11, the second transistor T21, and the capacitorC11 may respectively correspond to the scan line SL1, the data line DL1,the voltage source line VL1, the light emitting element LE10 a, thefirst transistor TR10 a, the second transistor TR10 b, and the capacitorCT10 of FIG. 3B.

According to other exemplary embodiments, a unit region of the displayapparatus may have a configuration in which three or more transistorsand one or more capacitors are combined. For example, as illustrated inFIG. 7, a unit region of the display apparatus may have a 4T-2Cconfiguration.

FIG. 7 is a circuit diagram illustrating a circuit configuration of aunit region of a display apparatus according to another exemplaryembodiment.

Referring to FIG. 7, a scan line SL12 may be provided, and a data lineDL12 and a voltage source line VL12 intersecting the scan line SL12 maybe provided. A first transistor T12 connected between the voltage sourceline VL12 and a first group of light emitting elements L12 may beprovided. A second transistor T22 may be provided at an intersectionbetween the scan line SL12 and the data line DL12. A third transistorT32, connected between the second transistor T22 and the voltage sourceline VL12, may be provided. A first capacitor C12, connected between thevoltage source line VL12 and the third transistor T32, may be provided.A fourth transistor T42, connected between the first capacitor C12 andthe third transistor T32, may be provided. A second capacitor C22,connected between the second transistor T22 and the third transistorT32, may be provided. A first additional line LN12, connected to a gateof the fourth transistor T42, may be further provided, and a secondadditional line LN22, connected to a gate of the first transistor T12,may be further provided.

The circuit configurations of the unit regions described with referenceto FIGS. 6 and 7 are merely examples and may be modified in any ofvarious ways. In some cases, a unit region of the display apparatus mayinclude four or more transistors and/or two or more capacitors.

FIG. 8 is a cross-sectional view illustrating a light emitting elementthat may be applied to a display apparatus according to an exemplaryembodiment.

Referring to FIG. 8, a light emitting element LE11 may be a verticallight emitting structure, and the vertical light emitting structure mayhave a core-shell structure and a nanowire shape. The vertical lightemitting structure LE11 may include a first conductivity typesemiconductor SC11 having a nanopillar shape, and an active layer AL11and a second conductivity type semiconductor SC21 surrounding the firstconductivity type semiconductor SC11. The first conductivity typesemiconductor SC11 may be referred to as a core portion, and the activelayer AL11 and the second conductivity type semiconductor SC21 may bereferred to as a shell portion. The materials and/or configurations ofthe first conductivity type semiconductor SC11, the active layer AL11,and the second conductivity type semiconductor SC21 may be identical orsimilar to those described with reference to FIG. 3A. As an example, thefirst conductivity type semiconductor SC11 may include an n-GaN-basedmaterial, the second conductivity type semiconductor SC21 may include ap-GaN-based material, and the active layer AL11 may have a GaN-based MQWstructure.

A side plane (vertical plane) of the first conductivity typesemiconductor SC11 may be a (10-10) m-plane. An inclined plane of thetop of the first conductivity type semiconductor SC11 may be a (10-11)s-plane or a (10-12) r-plane. For improvement of light emissioncharacteristics, it may be advantageous to form the active layer AL11having an MQW structure at a surface of the first conductivity typesemiconductor SC11 having such crystal planes. In an MQW structureformed by crystal planes other than a (10-10) m-plane, a (10-11)s-plane, a (10-12) r-plane, and a (0001) c-plane, an indium compositionmay change and thus a half width of a peak spectrum may increase and thecolor purity thereof may decrease. When the light emitting element LE11of the present exemplary embodiment is used, such problems may besuppressed or prevented. The light emitting element LE11 of the presentexemplary embodiment may be referred to as having a non-polar core-shellstructure.

FIG. 9 is a cross-sectional view illustrating a light emitting elementthat may be applied to a display apparatus according to anotherexemplary embodiment.

Referring to FIG. 9, a light emitting element LE12 may be a verticallight emitting structure, and the vertical light emitting structure mayhave a core-shell structure. The vertical light emitting structure mayhave the shape of a combination of a nanowire and a nanopyramid. Forexample, a first conductivity type semiconductor SC12 may include afirst portion P1 perpendicular to a substrate and a second portion P2provided on the first portion P1. Herein, the first portion P1 may havea first width, and the second portion P2 may have a second width largerthan the first width. The first portion P1 may have a nanowire shape,and the second portion P2 may have a nanopyramid shape or a similarshape. The first portion P1 may have a width of about 600 nm or less,for example, a width of about 100 nm to about 500 nm and may have aheight (length) of about 1 μm or more. A surface (inclined plane) of thesecond portion P2 may be a (10-11) s-plane.

The light emitting element LE12 may include an active layer AL12covering the second portion P2 of the first conductivity typesemiconductor SC12 and a second conductivity type semiconductor SC22covering the active layer AL12. The second portion P2 of the firstconductivity type semiconductor SC12 may be a core portion, and theactive layer AL12 and the second conductivity type semiconductor SC22may be a shell portion. At least one of the first conductivity typesemiconductor SC12, the active layer AL12, and the second conductivitytype semiconductor SC22 may have a III-V group-based semiconductor. Asan example, the first conductivity type semiconductor SC12 may includean n-GaN-based material, the second conductivity type semiconductor SC22may include a p-GaN-based material, and the active layer AL12 may have aGaN-based MQW structure.

As in the present exemplary embodiment, when a nanowire portion having asmall width is formed (grown) and a nanopyramid portion is formed(grown) thereon, the nanopyramid portion may have crystallographicallyexcellent characteristics. As a narrow first portion P1 grows, variousdefects such as dislocation may be removed or suppressed andconsequently the second portion P2 may have excellent crystallinecharacteristics and few or no defects. Thus, the second conductivitytype semiconductor SC22 and the active layer AL12 formed on the secondportion P2 may also have excellent crystalline characteristics. Inaddition, when the second portion P2 has a (10-11) s-plane at itssurface, it may be more advantageous for improvement of the lightemission characteristics. The light emitting element LE12 of the presentexemplary embodiment may be referred to as having a semi-polarcore-shell structure.

When the light emitting elements LE11 and LE12, as shown in FIGS. 8 and9, having a vertical nanostructure are used, it may be advantageous forimplementation of high-integration devices and for implementation ofhigh resolution.

FIG. 10 is a cross-sectional view illustrating a light emitting elementthat may be applied to a display apparatus according to anotherexemplary embodiment.

Referring to FIG. 10, a light emitting element LE13 may include amesa-type light emitting structure. The mesa-type light emittingstructure may include a first conductivity type semiconductor SC13, anactive layer AL13, and a second conductivity type semiconductor SC23.The first conductivity type semiconductor SC13, the active layer AL13,and the second conductivity type semiconductor SC23 may form a layeredstructure substantially parallel to a substrate. At least a portion ofthe first conductivity type semiconductor SC13 may have a width largerthan that of the active layer AL13 and of the second conductivity typesemiconductor SC23, and may have a shape that protrudes sideways. Thus,a top surface of a protruding portion of the first conductivity typesemiconductor SC13 may not be covered by the active layer AL13 and thesecond conductivity type semiconductor SC23. The materials of the firstconductivity type semiconductor SC13, the active layer AL13, and thesecond conductivity type semiconductor SC23 may be identical or similarto the materials of the first conductivity type semiconductor SC1, theactive layer AL1, and the second conductivity type semiconductor SC2described with reference to FIG. 3A.

The light emitting element LE13 may further include a passivation layerPS13 covering a side surface of the mesa-type light emitting structure.The passivation layer PS13 may be formed of an insulator or asemiconductor such as p-GaN, SiO₂, Si₃N₄, or Al₂O₃. Since the mesa-typelight emitting structure is formed by etching, when a side surface(etching surface) of the active layer AL13 is exposed, a problem ofnon-radiative surface recombination may occur accordingly. As the sizeof a mesa-type light emitting structure decreases in order to implementa high resolution with a size of about 60 μm or less, the light emissionefficiency may decrease rapidly due to the non-radiative surfacerecombination. In the present exemplary embodiment, the passivationlayer PS13, covering a side surface of the active layer AL13, may beused to suppress/prevent the problem of non-radiative surfacerecombination.

FIG. 11 is a cross-sectional view illustrating a display apparatusaccording to another exemplary embodiment. The present exemplaryembodiment is a modification of FIG. 1 and illustrates a particularembodiment of a color control member CL11.

Referring to FIG. 11, a light emitting element array LA10 including aplurality of light emitting elements LE10, a transistor array TA10including a plurality of transistors TR10 electrically connected to theplurality of light emitting elements LE10, and a color control memberCL11 configured to adjust a color of light generated by the plurality oflight emitting elements LE10 may be provided on a substrate SUB10. Also,the display apparatus of the present exemplary embodiment may be dividedinto a plurality of unit regions SP1, SP2, and SP3. Each of theplurality of unit regions SP1, SP2, and SP3 may correspond to asubpixel. Hereinafter, the first unit region SP1 will be referred to asa first subpixel, the second unit region SP2 will be referred to as asecond subpixel, and the third unit region SP3 will be referred to as athird subpixel.

In the present exemplary embodiment, all of the plurality of lightemitting elements LE10 may be blue light emitting elements, for example,blue LEDs. In this case, the color control member CL11 may include ablue-to-green color converting element CC1 in a region corresponding toany one of the first to third subpixels SP1 to SP3, for example, thesecond subpixel SP2. Also, the color control member CL11 may include ablue-to-red color converting element CC2 in a region corresponding toanother one of the first to third subpixels SP1 to SP3, for example, thethird subpixel SP3. Also, the color control member CL11 may furtherinclude a light scattering element LS1 in a region corresponding toanother one of the first to third subpixels SP1 to SP3, for example, thefirst subpixel SP1. The blue-to-green color converting element CC1 mayinclude a photoresist (PR), a first quantum dot (QD), and a lightscattering agent, and the blue-to-red color converting element CC2 mayinclude a photoresist (PR), a second quantum dot (QD), and a lightscattering agent. The light scattering element LS1 may include aphotoresist (PR) and a light scattering agent. The color control memberCL11 may include a black matrix (BM) pattern between the colorconverting elements CC1 and CC2 and the light scattering element LS1.The black matrix (BM) pattern may function as a kind of partition wall(barrier).

Consequently, the first subpixel SP1 may be a blue (B) subpixel, thesecond subpixel SP2 may be a green (G) subpixel, and the third subpixelSP3 may be a red (R) subpixel. Thus, a full-color display may beimplemented by using the R/G/B.

The display apparatus of the present embodiment may further include ablue cut filter (BCF) FT11 covering the blue-to-green color convertingelement CC1 and the blue-to-red color converting element CC2 on thecolor control member CL11. The BCF FT11 may not transmit (e.g., mayreflect) blue wavelengths (about 400 nm to about 500 nm) and maytransmit only wavelength bands other than a blue wavelength band. Thus,in the region of the second and third subpixels SP2 and SP3, theemission of blue light not reacting with the color converting elementsCC1 and CC2 may be more securely blocked by the BCF FT11.

Also, the display apparatus may further include a yellow recycling film(YRF) FL11 provided between the color control member CL11 and the lightemitting element array LA10. The YRF FL11 may be provided on thetransistor array TA10 and may be formed throughout the region of thefirst to third subpixels SP1 to SP3. The YRF FL11 may transmit bluewavelengths and may reflect green wavelengths and red wavelengths. Forexample, the YRF FL11 may transmit a wavelength band of about 500 nm orless and may reflect a wavelength band of about 500 nm to about 790 nm.Thus, the blue light generated by the plurality of light emittingelements LE10 may be irradiated onto the light scattering element LS1,the blue-to-green color converting element CC1, and the blue-to-redcolor converting element CC2 through the YRF FL11. Also, the green lightand the red light emitted downward from the blue-to-green colorconverting element CC1 and the blue-to-red color converting element CC2may be reflected by the YRF FL11 and then emitted upward. The lightefficiency may be improved by the YRF FL11.

At least one of the BCF FT11 and the YRF FL11 may be formed, forexample, in a distributed Bragg reflector (DBR) structure. By repeatedlystacking two material layers (dielectrics) having different refractiveindexes and adjusting the thicknesses of material layers and the numberof stacked layers, a DBR structure capable of transmitting or reflectingonly a desired wavelength band may be made, and the DBR structure may beapplied to the BCF FT11 or the YRF FL11. For example, a SiO₂ layer and aTiO₂ layer may be repeatedly stacked under λ/4 conditions (where λ isthe wavelength of light), and the reflectance or transmittance of adesired wavelength band may be increased by adjusting the thicknesses oflayers and the number of stacked layers. Since the DBR structure is wellknown in the art, detailed descriptions thereof will be omitted forconciseness. Also, at least one of the BCF FT11 and the YRF FL11 mayhave another structure (e.g., a high-contrast grating (HCG) structure)other than the DBR structure. In addition, the configurations of the BCFFT11 and the YRF FL11 may be modified in any of various ways.

Each of the BCF FT11 and the YRF FL11 may have a substantially flatlayer structure. The color control member CL11 therebetween may alsohave a substantially flat layer structure. When the BCF FT11 and the YRFFL11 have a substantially flat layer structure, the height difference(step difference) in their effective regions may be less than about 20nm, less than about 10 nm, or less than about 5 nm. This may also betrue for the color control member CL11. When the BCF FT11 and the YRFFL11 have a flat layer structure, it may be advantageous forimplementation of excellent characteristics. In particular, if the BCFFT11 and the YRF FL11 are formed in a multi-layer structure such as aDBR structure, when they have a flat layer structure, desiredcharacteristics may be easily implemented. Likewise, when the colorcontrol member CL11 has a flat layer structure, it may be advantageousfor implementation of excellent color control characteristics. In thepresent exemplary embodiments, the color control member and the opticalfilm/filter provided thereon/thereunder may have a flat layer structureand thus may be advantageous for implementation of excellentcharacteristics.

The YRF FL11 may be referred to as a first optical film for transmittinga first wavelength band of light and reflecting a second wavelength bandof light, and the BCF FT11 may be referred to as a second optical filmfor blocking a first wavelength band of light transmitted by the YRFFL11 and transmitting a second wavelength band of light reflected by theYRF FL11.

FIG. 12 is a cross-sectional view illustrating a display apparatusaccording to another exemplary embodiment.

Referring to FIG. 12, all of a plurality of light emitting elements LE10may be white light emitting elements, for example, white LEDs. In thiscase, a color control member CL12 may include a blue color filter CF1 ina region corresponding to any one of the first to third subpixels SP1 toSP3, for example, the first subpixel SP1. Also, the color control memberCL12 may further include a green color filter CF2 in a regioncorresponding to another one of the first to third subpixels SP1 to SP3,for example, the second subpixel SP2. Also, the color control memberCL12 may include a red color filter CF3 in a region corresponding toanother one of the first to third subpixels SP1 to SP3, for example, thethird subpixel SP3. The blue color filter CF1 may selectively transmit ablue light, the green color filter CF2 may selectively transmit a greenlight, and the red color filter CF3 may selectively transmit a redlight. A black matrix (BM) pattern may be provided between and aroundthe filters CF1 to CF3.

FIG. 11 illustrates the configuration and combination of the colorcontrol member CL11 for implementing RGB when a blue light emittingelement is used, and FIG. 12 illustrates the configuration andcombination of the color control member CL12 for implementing RGB when awhite light emitting element is used. However, those described withreference to FIGS. 11 and 12 are merely examples and may be modified inany of various ways. The color of light generated by the plurality oflight emitting elements may vary according to embodiments, and thecombination or arrangement of subpixels by the color control member maybe modified in any of various ways.

FIG. 13 is a diagram illustrating a display apparatus according to acomparative example.

Referring to FIG. 13, according to a comparative example, each of a red(R) subpixel, a green (G) subpixel, and a blue (B) subpixel may betransferred onto a TFT array substrate. Since a transfer process isperformed, high resolution implementation may be difficult and a processthereof may be difficult. A pixel resolution of about 250 μm isexpected.

FIG. 14 is a diagram illustrating a display apparatus according toanother comparative example.

Referring to FIG. 14, RGB pixels are formed on a first substrate(wafer), and then they are transferred onto a TFT array substrate inunits of RGB pixels. Since this comparative example also uses a transferprocess, high resolution implementation may be difficult.

In the present exemplary embodiments, the light emitting element arrayLA10, the transistor array TA10, and the color control member CL10 maybe monolithically provided on one substrate SUB10. Thus, a displayapparatus having a high resolution may be easily manufactured withoutusing a transfer process. For example, a display apparatus having a highresolution of about 100 PPI (pixels per inch) or more may be easilyimplemented. Since the light emitting element array LA10 may beconstructed using nanosized inorganic material-based light emittingelements, it may be possible to implement a display apparatus havingexcellent characteristics in various aspects such as brightness,resolution, contrast ratio, lifetime, multi-depth, form factor, colorpurity, and power efficiency, even in small sizes.

FIG. 15 is a plan view illustrating a display apparatus according toanother exemplary embodiment.

Referring to FIG. 15, a display apparatus may include an active regionAA10 provided on a substrate SUB100. The active region AA10 may includea light emitting element array, a transistor array, and a color controlmember. The substrate SUB100 and the active region AA10 may have thestructures described with reference to FIGS. 1, 11, and 12. As anexample, the substrate SUB100 may correspond to the substrate SUB10 ofFIG. 1, and the active region AA10 may include the light emittingelement array LA10, the transistor array TA10, and the color controlmember CL10 of FIG. 1.

The display apparatus of the present exemplary embodiment may furtherinclude a scan driver SD10 and a data driver DD10 connected to theactive region AA10. The scan driver SD10 and the data driver DD10 may bemonolithically provided on the substrate SUB100 together with the activeregion AA10. Since the active region AA10, the scan driver SD10, and thedata driver DD10 may be monolithically provided on a single substrateSUB100, the system and overall structure of the display apparatus may besimplified and the manufacturing process thereof may also be simplified.

In addition, an image signal processor (not illustrated) electricallyconnected to the display apparatus may be further provided. The imagesignal processor may be provided as a separate chip with respect to thedisplay apparatus, and they may be electrically connected to each other.Image signals may be input/output between the display apparatus and theimage signal processor.

According to another exemplary embodiment, the image signal processormay be provided on the substrate SUB100. An example thereof isillustrated in FIG. 16.

FIG. 16 is a plan view illustrating a display apparatus according toanother exemplary embodiment.

Referring to FIG. 16, a display apparatus may further include an imagesignal processor ISP10 provided on a substrate SUB100. Also, the displayapparatus may further include a communication part (communication unitor communicator) CM10 provided on the substrate SUB100. The image signalprocessor ISP10 and the communication part CM10 may be monolithicallyprovided on the substrate SUB100 together with the active region AA10,the scan driver SD10, and the data driver DD10. The communication partCM10 may communicate signals with an external apparatus (notillustrated). The communication part CM10 may include at least one of aradio frequency (RF) signal receiver, an antenna, a Bluetooth apparatus,and a Wi-Fi apparatus.

As described with reference to FIGS. 15 and 16, a display apparatusaccording to exemplary embodiments may have an almost fully monolithicconfiguration or a fully monolithic configuration. Thus, a system and anoverall structure of the display apparatus may be simplified. Also, amanufacturing process thereof may be simplified.

The display apparatuses according to the above exemplary embodiments maybe usefully applied to any of various apparatuses such as wearableapparatuses or portable apparatuses. For example, the above displayapparatuses may be applied to head-mounted displays (HMDs) such asglasses-type displays or goggle-type displays. Also, the above displayapparatuses may be applied to virtual reality (VR) displays or augmentedreality (AR) displays requiring micro-displays having high resolutionand high brightness.

A micro-display may have a size of about 6 inches or less. Since thedisplay apparatuses according to the present exemplary embodiments maybe easily manufactured in small size/volume and may exhibithigh-resolution and high-brightness performance even in small size, theymay be usefully applied to micro-displays for implementation of AR or VRand may also be usefully applied to display apparatuses forimplementation of three-dimensional images as well as two-dimensionalimages. In addition, the above display apparatuses may be applied toprojection displays having smaller volume than liquid crystal on silicon(LCOS) displays.

FIG. 17 is a flowchart illustrating a method of manufacturing a displayapparatus according to an exemplary embodiment.

Referring to FIG. 17, a light emitting element array including aplurality of light emitting elements may be formed on a substrate(operation S100). The plurality of light emitting elements may include avertical light emitting structure (nanostructure) having a core-shellstructure or may include a mesa-type light emitting structure having apassivation layer on a side surface thereof.

Thereafter, a transistor array including a plurality of transistors maybe formed on the substrate (operation S200). The plurality oftransistors may be thin film transistors (TFTs) electrically connectedto the plurality of light emitting elements.

Thereafter, a color control member may be formed on the substrate(operation S300). The color control member may be provided on theplurality of light emitting elements and the plurality of transistorsand may have a configuration for adjusting the color of light generatedby the plurality of light emitting elements. The color control membermay include a quantum dot (QD)-based color converter or a color filter.

The light emitting element array, the transistor array, and the colorcontrol member may be monolithically formed on one substrate. Sincethere is no transfer process, the size of a pixel and the distancebetween pixels may be easily reduced, a manufacturing process thereofmay be simplified, and a display apparatus having a high resolution maybe easily manufactured.

FIGS. 18(A) and 18(B) through 22(A) and 22(B) are diagrams illustratinga method of forming a plurality of light emitting elements in a methodof manufacturing a display apparatus according to an exemplaryembodiment. Each of FIGS. 18(A), 19(A), 20(A), 21(A), and 22(A) is across-sectional view, and each of FIGS. 18(B), 19(B), 20(B), 21(B), and22(B) is a plan view, respectively corresponding thereto.

Referring to FIGS. 18(A) and 18(B), a semiconductor layer 200 may beformed on a substrate 100. The substrate 100 may be any one of varioussubstrates such as a sapphire (Al₂O₃) substrate, a Si substrate, a SiCsubstrate, an amorphous AlN substrate, and a Si—Al substrate. Thesemiconductor layer 200 may be, for example, an n-type semiconductorlayer or may be a p-type semiconductor layer in some cases. Thesemiconductor layer 200 may have a single-layer structure or amulti-layer structure. The semiconductor layer 200 may include a III-Vgroup-based n-type semiconductor, for example, n-GaN.

A first insulating layer 210 may be formed on the semiconductor layer200, and a second insulating layer 220 may be formed on the firstinsulating layer 210. The first insulating layer 210 and the secondinsulating layer 220 may be formed of different materials. As anexample, the first insulating layer 210 may be formed of a siliconnitride, and the second insulating layer 220 may be formed of a siliconoxide. However, this is merely an example, and the materials of thefirst and second insulating layers 210 and 220 may be modified accordingto various embodiments. The second insulating layer 220 may have athickness larger than that of the first insulating layer 210. Whenappropriate, a chemical mechanical polishing (CMP) process may beperformed on a surface portion (top surface portion) of the secondinsulating layer 220.

Referring to FIGS. 19(A) and 19(B), a plurality of holes h1, exposingthe semiconductor layer 200, may be formed by etching predeterminedregions of the first insulating layer 210 and the second insulatinglayer 220, and a first conductivity type semiconductor 20 may be grownfrom the semiconductor layer 200 exposed by the plurality of holes h1.Thus, the plurality of holes h1 may be filled with the firstconductivity type semiconductor 20. Thereafter, the second insulatinglayer 220 may be removed. Only the second insulating layer 220 may beselectively removed by an etch selectivity between the second insulatinglayer 220 and the first insulating layer 210. A resulting structurethereof is illustrated in FIGS. 20(A) and 20(B).

Referring to FIGS. 20(A) and 20(B), a plurality of first conductivitytype semiconductors 20 may be arranged to form an array. The pluralityof first conductivity type semiconductors 20 may be divided into aplurality of groups, and each group may include at least one firstconductivity type semiconductor 20. A plurality of first conductivitytype semiconductors 20 may be provided in each group.

Referring to FIGS. 21(A) and 21(B), an active layer 30, covering each ofthe first conductivity type semiconductors 20, may be formed, and asecond conductivity type semiconductor 40 covering the active layer 30may be formed. The first conductivity type semiconductor 20 may be an ntype and the second conductivity type semiconductor 40 may be a p type,or vice versa. The active layer 30 may include a light emitting layer.The active layer 30 may have a single-quantum well (SQW) structure or amulti-quantum well (MQW) structure. At least one of the firstconductivity type semiconductor 20, the active layer 30, and the secondconductivity type semiconductor 40 may include a III-V group-basedsemiconductor. As an example, the first conductivity type semiconductor20 may include an n-GaN-based material, the second conductivity typesemiconductor 40 may include a p-GaN-based material, and the activelayer 30 may have a GaN-based MQW structure. In this case, the firstconductivity type semiconductor 20, the active layer 30, and the secondconductivity type semiconductor 40 may be formed by an epitaxy process.Each of the first conductivity type semiconductors 20 and the activelayer 30 and the second conductivity type semiconductor 40 covering thefirst conductivity type semiconductors 20 may be referred to asconstituting one light emitting element LE1. The light emitting elementLE1 may correspond to the light emitting element LE11 described withreference to FIG. 8.

A plurality of light emitting elements LE1 may be arranged to form anarray. A plurality of light emitting elements LE1 may be divided into aplurality of groups, and each group may include two or more lightemitting elements LE1. A first electrode 80 contacting the lightemitting elements LE1 of each group may be formed. The first electrode80 may be formed of a transparent conductive material. For example, thefirst electrode 80 may be formed of a transparent conductive oxide suchas an indium tin oxide (ITO).

Referring to FIGS. 22(A) and 22(B), a third insulating layer 300covering the plurality of light emitting elements LE1 and the firstelectrode 80 may be formed. By forming an insulating material layercovering the plurality of light emitting elements LE1 and the firstelectrode 80 on the first insulating layer 210 and then performing achemical mechanical polishing (CMP) process on the insulating materiallayer, the third insulating layer 300 having a flat surface (or asubstantially flat surface) may be obtained. The third insulating layer300 may be formed of, for example, a silicon oxide; however, thematerial may vary according to embodiments. A surface (top surface) ofthe third insulating layer 300 may have a height that is equal orsimilar to the height of a portion of the first electrode 80 formed onthe plurality of light emitting elements LE1. In some cases, a portionof the end of the first electrode 80 may somewhat protrude with respectto the third insulating layer 300. Alternatively, in order to completelycover the first electrode 80, the third insulating layer 300 may have aheight greater than that of the first electrode 80.

FIGS. 23(A) and (B) through 26(A) and (B) are diagrams illustrating amethod of forming a plurality of light emitting elements in a method ofmanufacturing a display apparatus according to another exemplaryembodiment. Each of FIGS. 23(A), 24(A), 25(A) and 26(A) is across-sectional view, and each of FIGS. 23(B), 24(B), 25(B), and 26(B)is a plan view, respectively corresponding thereto.

Referring to FIGS. 23(A) and 23(B), a semiconductor layer 201 may beformed on a substrate 101. The substrate 101 and the semiconductor layer201 may be identical or similar to the substrate 100 and thesemiconductor layer 200 described with reference to FIG. 18. A firstinsulating layer 211 may be formed on the semiconductor layer 201. Forexample, the first insulating layer 211 may be formed of, for example, asilicon oxide; however, the material is not limited thereto. Also,although the first insulating layer 211 is illustrated as a single-layerstructure, it may be formed as a multi-layer structure in some cases. Asan example, the first insulating layer 211 may have a double-layerstructure formed of different insulating materials. In this case, thefirst insulating layer 211 may include a silicon nitride layer and asilicon oxide layer that are sequentially stacked.

Referring to FIGS. 24(A) and 24(B), a plurality of holes h2 exposing thesemiconductor layer 201 may be formed by etching predetermined regionsof the first insulating layer 211, and a first conductivity typesemiconductor 21 may be grown from the semiconductor layer 201 exposedby the plurality of holes h2. In this case, the first conductivity typesemiconductor 21 may be grown to extend above the height of the hole h2.

The first conductivity type semiconductor 21 may include a first portion21A provided in the hole h2 and a second portion 21B protruding abovethe hole h2. The second portion 21B may be grown upward from the firstportion 21A. The first portion 21A may have a nanowire shape, and thesecond portion 21B may have a nanopyramid shape or a similar shape.

Referring to FIGS. 25(A) and 25(B), an active layer 31 covering thesecond portion 21B of the first conductivity type semiconductors 21 maybe formed, and a second conductivity type semiconductor 41 covering theactive layer 31 may be formed. The materials of the first conductivitytype semiconductor 21, the active layer 31, and the second conductivitytype semiconductor 41 may be identical or similar to the materials ofthe first conductivity type semiconductor 20, the active layer 30, andthe second conductivity type semiconductor 40 described with referenceto FIGS. 21(A) and 21(B). Each of the first conductivity typesemiconductors 21 and the active layer 31 and the second conductivitytype semiconductor 41 covering the first conductivity typesemiconductors 21 may be referred to as constituting one light emittingelement LE2. The light emitting element LE2 may correspond to the lightemitting element LE12 described with reference to FIG. 9.

A plurality of light emitting elements LE2 may be arranged to form anarray. A plurality of light emitting elements LE2 may be divided into aplurality of groups, and each group may include two or more lightemitting elements LE2. A first electrode 81 contacting the lightemitting elements LE2 of each group may be formed.

Referring to FIGS. 26(A) and 26(B), a second insulating layer 301covering the plurality of light emitting elements LE2 and the firstelectrode 81 may be formed. By forming an insulating material layercovering the plurality of light emitting elements LE2 and the firstelectrode 81 on the first insulating layer 211 and then performing a CMPprocess on the insulating material layer, the second insulating layer301 having a flat surface (or a substantially flat surface) may beobtained. A surface (top surface) of the second insulating layer 301 mayhave a height that is equal or similar to the height of a portion of thefirst electrode 81 formed on the plurality of light emitting elementsLE2. The second insulating layer 301 may be formed of, for example, asilicon oxide; however, the material may vary according to embodiments.

FIGS. 27 to 30 are cross-sectional views illustrating a method offorming a plurality of light emitting elements in a method ofmanufacturing a display apparatus according to another exemplaryembodiment.

Referring to FIG. 27, a semiconductor layer 202 may be formed on asubstrate 102. A first conductivity type semiconductor 22L, an activelayer 32L, and a second conductivity type semiconductor 42L may besequentially formed on the semiconductor layer 202. The firstconductivity type semiconductor 22L, the active layer 32L, and thesecond conductivity type semiconductor 42L may have a layered structureparallel to the semiconductor layer 202.

Referring to FIG. 28, a plurality of mesa-type light emitting elementsLE3 may be formed by patterning the second conductivity typesemiconductor 42L, the active layer 32L, and the first conductivity typesemiconductor 22L. Reference numerals 22, 32, and 42 denote a patternedfirst conductivity type semiconductor, a patterned active layer, and apatterned second conductivity type semiconductor, respectively.

Thereafter, a passivation layer 62 covering a side surface of themesa-type light emitting element LE3 may be formed. The passivationlayer 62 may be formed of an insulator or a semiconductor such as p-GaN,SiO₂, Si₃N₄, or Al₂O₃. A problem of non-radiative surface recombinationmay be suppressed or prevented by the passivation layer 62 covering aside surface of the active layer 32. The mesa-type light emittingelement LE3 having the passivation layer 62 on a side surface thereofmay correspond to the light emitting element LE13 described withreference to FIG. 10.

Referring to FIG. 29, a first electrode 82 contacting the secondconductivity type semiconductor 42 may be formed. The first electrode 82may be formed of a transparent conductive material and may be formed toextend to one side of the light emitting element LE3, as shown.

Referring to FIG. 30, an insulating layer 302 covering the plurality oflight emitting elements LE3 and the first electrode 82 may be formed. Amethod of forming the insulating layer 302 may be similar to a method offorming the second insulating layer 301 of FIGS. 26(A) and 26(B).

In the present exemplary embodiment, the formation range and the shapeof the first electrode 82 may vary, and the first electrode 82 may beomitted in some cases. When the first electrode 82 omitted, a conductiveplug (not illustrated) directly contacting the second conductivity typesemiconductor 42 may be formed in a subsequent process.

In the methods of forming a plurality of light emitting elementsdescribed with reference to FIGS. 18(A) and 18(B) through 22(A) and22(B), FIGS. 23(A) and 23(B) through 26(A) and 26(B), and FIGS. 27 to30, at least two light emitting elements may be connected to each otherto have a connected (continuous) structure. For example, in FIGS. 21(A)and 21(B), the active layer 30 and the second conductivity typesemiconductor 40 may have a continuous layer structure to cover a regionof the plurality of light emitting elements LE1, instead of beingpatterned in units of each of the light emitting element LE1. Likewise,in FIGS. 25(A) and 25(B), the active layer 31 and the secondconductivity type semiconductor 41 may have a continuous layer structureto cover a region of the plurality of light emitting elements LE2. Also,in the case of the mesa-type light emitting element LE3 of FIG. 28, thefirst conductivity type semiconductor 22 may have a continuous layerstructure to connect the regions of the plurality of light emittingelements LE3. For example, by not patterning the first conductivity typesemiconductor 22L of FIG. 27 or by patterning (etching) a portion of thetop thereof, the patterned active layer 32 and the patterned secondconductivity type semiconductor 42 may be formed on the firstconductivity type semiconductor having a continuous layer structure. Inthis case, the semiconductor layer 202 may not be formed.

FIGS. 31 to 35 are plan views illustrating a method of forming atransistor array in a method of manufacturing a display apparatusaccording to an exemplary embodiment.

Referring to FIG. 31, a region corresponding to one unit region of FIG.22(B) may be prepared. Thus, a first group of light emitting elementsLE1 and a first electrode 80 covering the first group of light emittingelements LE1 may be provided, and a third insulating layer 300 coveringthe first group of light emitting elements LE1 and the first electrode80 may be provided.

Referring to FIG. 32, a first channel layer 401 and a second channellayer 402 may be formed on the third insulating layer 300. The first andsecond channel layers 401 and 402 may be spaced apart from the firstelectrode 80. The first and second channel layers 401 and 402 mayinclude polycrystalline silicon (poly-Si) or amorphous silicon (a-Si),or may include at least one of an oxide semiconductor, a nitridesemiconductor, and an oxynitride semiconductor. However, the abovechannel layer materials are merely examples, and other channel layermaterials may be used. For example, the first and second channel layers401 and 402 may include a III-V group-based semiconductor (e.g., GaN),monocrystalline silicon, or an organic semiconductor.

Referring to FIG. 33, a fourth insulating layer 450 covering the firstand second channel layers 401 and 402 may be formed on the thirdinsulating layer 300 (see FIG. 32). The fourth insulating layer 450 maybe a gate insulating layer. Thereafter, a first conductive line pattern500 may be formed on the fourth insulating layer 450. The conductiveline pattern 500 may include a scan line 501, a first gate electrode503, a second gate electrode 502, and a first conductor 504. The firstgage electrode 503 may be disposed on the first channel layer 401, andthe second gage electrode 502 may be disposed on the second channellayer 402. The second gate electrode 502 may be a portion protrudingfrom the scan line 501 in a direction perpendicular thereto. The firstconductor 504 may be disposed near the second channel layer 402 and maybe connected to the gate electrode 503. The first conductor 504 and thefirst gate electrode 503 may form a bent structure (e.g., an L-shapedstructure).

Referring to FIG. 34, a fifth insulating layer 550 covering the firstconductive line pattern 500 may be formed on the fourth insulating layer450 (see FIG. 33). A second conductive line pattern 600 may be formed onthe fifth insulating layer 550. The second conductive line pattern 600may include a data line 601, a voltage source line 604, a first sourceelectrode 605, a first drain electrode 606, a second source electrode602, a second drain electrode 603, and a second conductor 607. Thearrangement of and relationships among the data line 601, the voltagesource line 604, the first source electrode 605, the first drainelectrode 606, the second source electrode 602, the second drainelectrode 603, and the second conductor 607 may be the same as thosedescribed with reference to FIG. 3B.

The first drain electrode 606 may be connected to the first electrode 80through a first conductive plug CP10. The first conductive plug CP10 maybe provided in a via hole. Reference numerals c11 and c12 denote contactportions connecting the first channel layer 401 to the first sourceelectrode 605 and the first drain electrode 606, reference numerals c13and c14 denote contact portions connecting the second channel layer 402to the second source electrode 602 and the second drain electrode 603,and a reference numeral c15 denotes a contact portion connecting thefirst conductor 504 to the second drain electrode 603.

Referring to FIG. 35, a sixth insulating layer 650, covering the secondconductive line pattern 600, may be formed on the fifth insulating layer550 (see FIG. 34). An insulating material layer covering the secondconductive line pattern 600 may be formed, and then a CMP process may beperformed to obtain the sixth insulating layer 650 having a flat surface(or a substantially flat surface). When the sixth insulating layer 650has a substantially flat surface, the height difference (stepdifference) in the surface may be less than about 20 nm, less than about10 nm, or less than about 5 nm. A second electrode 700 may be formed onthe sixth insulating layer 650. The second electrode 700 may beelectrically connected to the light emitting element LE1 through asecond conductive plug CP20. The second electrode 700 and the secondconductive plug CP20 may correspond to the second electrode E20 and thesecond conductive plug CP20 of FIGS. 3A and 3B.

FIGS. 36 and 37 are plan views illustrating a method of forming atransistor array in a method of manufacturing a display apparatusaccording to another exemplary embodiment.

Referring to FIG. 36, a device portion having the same structure as inFIG. 34 may be formed. In the present exemplary embodiment, the materialof the substrate may be a semiconductor or a conductor. Then, a sixthinsulating layer 650 covering a plurality of light emitting elements anda plurality of transistors may be formed on the substrate.

Referring to FIG. 37, a second electrode 710 may be formed at a bottomsurface (rear surface) of the substrate. The second electrode 710 may beelectrically connected to the light emitting element LE1 through thesubstrate. The second electrode 710 may correspond to the secondelectrode E22 of FIGS. 4A and 4B.

FIGS. 38 to 41 are cross-sectional views illustrating a method offorming a color control member in a method of manufacturing a displayapparatus according to an exemplary embodiment.

Referring to FIG. 38, a light emitting element array LA10 including aplurality of light emitting elements LE10 and a transistor array TA10including a plurality of transistors TR10 may be provided on a substrateSUB10. The substrate SUB10, the light emitting element array LA10, andthe transistor array TA10 may be the same as those described withreference to FIG. 1. In the present exemplary embodiment, the pluralityof light emitting elements LE10 may be blue light emitting elements(e.g., blue LEDs).

Referring to FIG. 39, a first optical film FL11 may be formed on thelight emitting element array LA10 and the transistor array TA10. Thefirst optical film FL11 may be, for example, a yellow recycling film(YRF). The YRF may transmit blue wavelengths and may reflect greenwavelengths and red wavelengths.

Thereafter, a black matrix pattern BM may be formed on the first opticalfilm FL11. The black matrix pattern BM may be disposed above thetransistor TR10.

Referring to FIG. 40, color converting elements CC1 and CC2 may beformed in spaces defined by the black matrix pattern BM. For example, ablue-to-green color converting element CC1 may be formed in a regioncorresponding to a second subpixel SP2, and a blue-to-red colorconverting element CC2 may be formed in a region corresponding to athird subpixel SP3. Also, a light scattering element LS1 may be formedin a region corresponding to a first subpixel SP1. The blue-to-greencolor converting element CC1 may include a photoresist (PR), a firstquantum dot (QD), and a light scattering agent, and the blue-to-redcolor converting element CC2 may include a photoresist (PR), a secondquantum dot (QD), and a light scattering agent. The light scatteringelement LS1 may include a photoresist (PR) and a light scattering agent.The color converting elements CC1 and CC2 and the light scatteringelement LS1 may be formed by using a negative photoresist process usedin a conventional semiconductor process.

Referring to FIG. 41, a second optical film FT11 may be formed on thecolor control member CL11. The second optical film FT11 may be formed tocover the blue-to-green color converting element CC1 and the blue-to-redcolor converting element CC2, and may not cover the light scatteringelement LS1. The second optical film FT11 may be a blue cut filter(BCF). The BCF may not transmit blue wavelengths (about 400 nm to about500 nm) and may transmit only wavelength bands other than a bluewavelength band.

The apparatus of FIG. 41 may correspond to the apparatus of FIG. 11. Ifthe plurality of light emitting elements LE10 are white light emittingelements, a color control member CL12 as in FIG. 12 may be formed toimplement a full-color display. In addition, the formation method andthe configuration of the color control member may be modified in any ofvarious ways according to the arrangement method and the combination ofsubpixels and the light emission color of light emitting elements.

Also, although FIGS. 31 to 41 illustrate a case in which a displayapparatus is manufactured by using the structure of FIGS. 22(A) and22(B) as a base structure, a display apparatus may be manufactured byusing the structure of FIGS. 26(A) and 26(B) or FIG. 30 as a basestructure. This may be easily known by those of ordinary skill in theart, and thus detailed descriptions thereof will be omitted forconciseness.

Also, as described with reference to FIGS. 15 and 16, an active region,a scan driver, a data driver, an image signal processor, and acommunication part may be monolithically formed on one substrate. Thus,the display apparatuses according to exemplary embodiments may have analmost fully monolithic configuration or a fully monolithicconfiguration.

Although many details have been described above, they are not intendedto limit the scope of the inventive concept, but should be interpretedas merely exemplary embodiments. For example, those of ordinary skill inthe art will understand that the configurations of the light emittingelements, the light emitting element arrays, the transistors, thetransistor arrays, the driving units including the transistor arrays,and the color control members, and the connection relationshipstherebetween, which have been described above with reference to FIGS. 1to 12, may be modified in any of various ways. As a particular example,those of ordinary skill in the art will understand that the transistormay have a bottom-gate structure, not a top-gate structure, the lightemitting element may have a general LED structure, and the relativeposition and the connection relationship between the light emittingelement and the transistor corresponding thereto may vary according toembodiments. Also, those of ordinary skill in the art will understandthat the light emitting element manufacturing methods, the transistormanufacturing methods, the color control member manufacturing methods,and the display apparatus manufacturing methods using the same, whichhave been described above with reference to FIGS. 17 to 41, may bemodified in any of various ways. In addition, those of ordinary skill inthe art will understand that the application fields of the displayapparatuses according to the exemplary embodiments may be modified inany of various ways. Therefore, the scope of the inventive conceptshould be defined not by the described exemplary embodiments but by thespirit and scope described in the following claims.

It should be understood that exemplary embodiments described hereinshould be considered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments.

While one or more exemplary embodiments have been described withreference to the figures, it will be understood by those of ordinaryskill in the art that various changes in form and details may be madetherein without departing from the spirit and scope as defined by thefollowing claims.

What is claimed is:
 1. A display apparatus comprising: a first layeredstructure comprising an array of a plurality of light emitting elements,each comprising an inorganic material; a second layered structurecomprising an array of a plurality of transistors electrically connectedto the plurality of light emitting elements; and a third layeredstructure comprising a color control member disposed such that lightoutput from the plurality of light emitting elements is incident thereonand configured to control a color of light transmitted therefrom; andwherein at least two from among the first layered structure, the secondlayered structure and the third layered structure have a monolithicconfiguration.
 2. The display apparatus of claim 1, wherein theplurality of light emitting elements comprise a plurality of verticalnanostructures, and each of the plurality of vertical nanostructures hasa core-shell structure comprising a first conductivity typesemiconductor, an active layer, and a second conductivity typesemiconductor.
 3. The display apparatus of claim 2, wherein each of theplurality of vertical nanostructures comprises at least one a nanowirestructure and a nanopyramid structure.
 4. The display apparatus of claim2, wherein at least one of the first conductivity type semiconductor,the active layer, and the second conductivity type semiconductorcomprises a gallium nitride (GaN)-based material.
 5. The displayapparatus of claim 1, wherein each of the plurality of transistors isspaced apart from a light emitting element corresponding thereto suchthat the plurality of transistors do not overlap with the plurality oflight emitting elements.
 6. The display apparatus of claim 1, whereinthe display apparatus comprises a plurality of unit regions, and each ofthe plurality of unit regions comprises a combination of at least two ofthe plurality of transistors and at least one capacitor.
 7. The displayapparatus of claim 1, wherein the second layered structure furthercomprises an insulating layer covering the plurality of light emittingelements and the plurality of transistors, the insulating layer has asubstantially flat surface, the third layered structure is provided onthe substantially flat surface of the insulating layer, and the thirdlayered structure has a substantially flat layer structure.
 8. Thedisplay apparatus of claim 7, further comprising: a yellow recyclingfilm (YRF) provided between the second layered structure and the thirdlayered structure; and a blue cut filter (BCF) provided on the thirdlayered structure, wherein each of the YRF and the BCF has asubstantially flat layer structure.
 9. The display apparatus of claim 1,wherein the plurality of light emitting elements comprise a first groupof blue light emitting elements corresponding to a first subpixel, asecond group of blue light emitting elements corresponding to a secondsubpixel, and a third group of blue light emitting elementscorresponding to a third subpixel, and the color control membercomprises a blue-to-green color converting element corresponding to thesecond subpixel and a blue-to-red color converting element correspondingto the third subpixel.
 10. The display apparatus of claim 9, wherein thecolor control member further comprises a light scattering elementcorresponding to the first subpixel.
 11. The display apparatus of claim1, wherein the display apparatus comprises an active region comprisingthe plurality of light emitting elements, the plurality of transistors,and the color control member and further comprises a scan driverconnected to the active region and a data driver connected to the activeregion, and at least two from among the active region, the scan driver,and the data driver have a monolithic configuration.
 12. The displayapparatus of claim 1, wherein the display apparatus is a micro-displayapparatus having a size of about 6 inches or less.
 13. The displayapparatus of claim 1, wherein the first layered structure and the secondlayered structure have a monolithic configuration.
 14. A displayapparatus comprising: a light emitting element array provided andcomprising a plurality of light emitting elements, each comprising aninorganic material; a transistor array comprising a plurality oftransistors electrically connected to the plurality of light emittingelements; a color control member configured to adjust a color of lightgenerated by the plurality of light emitting elements; a first opticalfilm, disposed such that the light output from the plurality of lightemitting elements is incident thereon and configured to transmit, to thecolor control member, a light of a first wavelength band and reflect alight of a second wavelength band; and a second optical film, facing thefirst optical film with the color control member therebetween,configured to block the light of the first wavelength band and transmitthe light of the second wavelength band; and, wherein at least two fromamong the light emitting element array, the transistor array, the firstoptical film, the color control member, and the second optical film havea monolithic configuration.
 15. The display apparatus of claim 14,wherein the display apparatus comprises a first layered structurecomprising the light emitting element array, a second layered structurecomprising the transistor array, and a third layered structurecomprising the color control member.
 16. The display apparatus of claim15, wherein the third layered structure is provided between the firstoptical film and the second optical film.
 17. The display apparatus ofclaim 15, wherein the second layered structure has a substantially flatsurface, and the first optical film, the third layered structure, andthe second optical film are provided on the flat surface.
 18. Thedisplay apparatus of claim 14, wherein the plurality of light emittingelements comprise a first group of blue light emitting elementscorresponding to a first subpixel, a second group of blue light emittingelements corresponding to a second subpixel, and a third group of bluelight emitting elements corresponding to a third subpixel, and the colorcontrol member comprises a light scattering element corresponding to thefirst subpixel, a blue-to-green color converting element correspondingto the second subpixel, and a blue-to-red color converting elementcorresponding to the third subpixel.
 19. The display apparatus of claim14, further comprising: a first electrode electrically contacting afirst group of light emitting elements from among the plurality of lightemitting elements; a first insulating layer covering the first electrodeand the first group of light emitting elements; a second insulatinglayer covering the plurality of transistors and the plurality of lightemitting elements; and a second electrode electrically connected to theplurality of light emitting elements, provided on the second insulatinglayer.
 20. The display apparatus of claim 14, further comprising: afirst electrode electrically contacting a first group of light emittingelements from among the plurality of light emitting elements; a firstinsulating layer covering the first electrode and the first group oflight emitting elements; and a second electrode electrically connectedto the plurality of light emitting elements.
 21. The display apparatusof claim 14, wherein the light emitting element array and the transistorarray have a monolithic configuration.
 22. A method of manufacturing adisplay apparatus, the method comprising: preparing a substrate; andforming a first layered structure and a second layered structure on thesubstrate monolithically, wherein the first layered structure comprisesa plurality of light emitting elements, and the second layered structurecomprises a plurality of transistors electrically connected to theplurality of light emitting elements.
 23. The method of claim 22,wherein the substrate comprises Si.